张胜利 Shengli Zhang

来源:材料科学与工程学院/格莱特研究院发布时间:2020-06-22点击:2054


姓名

张胜利

性别

出生年月

1984.07

籍贯

河南商丘

邮箱

zhangslvip@njust.edu.cn

联系电话


通信地址

南京理工大学材料学院/格莱特研究院

邮编

210094

所属学科

材料学

职称

教授

研究方向

1. 二维半导体材料与电子器件

2. 纳米光电材料与器件

3. 新功能材料与新原理器件

所在系


 

个人简介

张胜利,教授,博导。本课题面向国家重大战略需求与全球重大挑战,聚焦后摩尔电子功能材料与器件关键基础科学问题,基于材料、物理、化学、电子与信息等多学科的交叉融合,通过理论预测实验合制备物性调控器件应用思路,开展了深入系统的研究工作。迄今为主,相关工作以第一或通讯作者发表SCI论文64篇,包括Adv. Mater. 2篇、Angew. Chem. Int. Ed. 2篇、Nano Lett. 2篇、Chem. Soc. Rev. 2篇、Mater. Horiz. 1篇等影响因子大于1012篇。近五年来,ESI-1%高被引用论文10篇,ESI-0.1%热点论文4篇。迄今为止,SCI论文总引用次6700余次,h-index34,单篇论文最高引用近1000次;研究成果相继被NatureNanowerkChemistry ViewsMaterials View等学术媒体亮点报道10余次。

先后主持了国家自然科学基金委重大研究计划项目、国家青年基金项目、江苏省优青项目等10项;入选江苏省高校青蓝工程中青年学术带头人、江苏省六大人才高峰高层次人才、南京理工大学卓越计划青年拔尖等高层次人才等。

 

代表性成果

1.        Hengze Qu, Shengli Zhang*, Wenhan Zhou, Shiying Guo, and Haibo Zeng*.   Ballistic Transport in High-Performance and Low-Power Sub-5 nm   Two-Dimensional ZrNBr MOSFETs. IEEE Electron Devices, 41(7), 1029-1032, 2020.

2.        Wenhan Zhou, Shengli Zhang*, Yangyang Wang, Shiying Guo, Hengze Qu, Pengxiang   Bai, Zhi Li, and Haibo Zeng*. Anisotropic In-Plane Ballistic Transport in   Monolayer Black Arsenic-Phosphorus FETs, Advanced Electronic Materials 6 (3), 1901281,   2020.

3.        Hengze Qu, Wenhan Zhou, Shiying Guo,   Zhi Li, Yangyang Wang, Shengli Zhang*.   Ballistic Quantum Transport of Sub-10 nm 2D Sb2Te2Se   Transistors. Advanced   Electronic Materials, 2019,1900813.

4.        Shiying Guo, Yupeng Zhang, Yanqi Ge, Shengli Zhang*, Haibo Zeng, and Han   Zhang*. 2D V-V binary materials: Status and challenges, Advanced Materials, 2019,   1902352.

5.        Tianchao Niu, Wenhan Zhou, Dechun   Zhou, Xuemin Hu, Shengli Zhang*,   Kan Zhang, Miao Zhou, Harald Fuchs*, and Haibo Zeng*. Modulating epitaxial   atomic structure of antimonene through interface design, Advanced Materials, 2019, 31,   1902606.

6.        Shengli   Zhang, Zhong Yan, Yafei Li, Zhongfang Chen*, and Haibo Zeng*. Atomically   thin arsenene and antimonene: Semimetal–semiconductor and indirect–direct band-gap   transitions, Angewandte   Chemie, 2015, 127, 3155–3158.

7.        Shengli   Zhang, Meiqiu Xie, Fengyu Li, Zhong Yan, Yafei Li, Erjun Kan, Wei Liu,   Zhongfang Chen, and Haibo Zeng*. Semiconducting group 15 monolayers: A broad   range of band gaps and high carrier mobilities, Angewandte   Chemie, 2016, 55, 1666–1669.

8.        Shengli   Zhang, Wenhan Zhou, Yandong Ma, Jianping Ji, Bo Cai, Shengyuan A. Yang,   Zhen Zhu,  Zhongfang Chen, and Haibo   Zeng*. Antimonene oxides: Emerging tunable direct bandgap semiconductor and   novel topological insulator, Nano Letters, 2017, 17(6), 3434–3440.

9.        Yaxin Huang, Chongyang Zhu, Shengli Zhang*, Xuemin Hu, Kan Zhang,   Wenhan Zhou, Shiying Guo, Feng Xu*, and Haibo Zeng*. Ultra-thin bismuth   nanosheets for stable Na-ion batteries: Clarification of structure and phase   transition by in situ observation, Nano Letters, 2019, 19, 1118–1123.

10.      Wenhan Zhou , Shengli Zhang*, Shiying Guo, Yangyang Wang, Jing Lu, Xing Ming,   Zhi Li, Hengze Qu, and Haibo Zeng*, Designing sub-10-nm   Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport   and Disparate Effective Mass: The Case of Two-Dimensional BiN, Physical Review   Applied. 13, 044066 (2020).

11.      Wenhan Zhou, Shiying Guo, Shengli Zhang*, Zhen Zhu, Shengyuan   A. Yang, Mingxing Chen, Bo Cai, Hengze Qu, and Haibo Zeng*. Unusual   electronic transitions in two-dimensional layered SnSb2Te4   driven by electronic state rehybridization,Physical Review Applied, 2019,   11(6), 064045.

12.      Shengli Zhang, Meiqiu Xie, Bo Cai,   Haijun Zhang, Yandong Ma, Zhongfang Chen, Zhen Zhu, Ziyu Hu*, and Haibo   Zeng*. Semiconductor-topological insulator transition of two-dimensional SbAs   induced by biaxial tensile strain, Physical Review B, 2016, 93(24), 245303.

13.      Wen Lei, Wei Wang, Xing Ming*, Shengli Zhang*, Gang Tang, Xiaojun   Zheng, Huan Li, and Carmine Autieri. Structural transition, metallization,   and superconductivity in quasi-two-dimensional layered under compression, Physical ReviewB   101 (20), 205149, 2020.

14.      Ziyu Hu, Junfeng Gao*, Shengli Zhang*, Jijun Zhao, Wenhan   Zhou, and Haibo Zeng. Topologically protected states and half-metal   behaviors: Defect-strain synergy effects in two-dimensional antimonene, Physical Review   Materials 3 (7), 074005 (2019)

15.      Shengli   Zhang, Shiying Guo, Zhongfang Chen, Yeliang Wang, Hongjun Gao, Julio   Go´mez-Herrero, Pablo Ares, Fe´lix Zamora*, Zhen Zhu, and Haibo Zeng*. Recent   progress in 2D group-VA semiconductors: from theory to experiment, Chemical Society   Reviews, 2018, 47(3), 982–1021.

16.      Xuhai Liu, Shengli Zhang*, Shiying Guo, Bo Cai, Shengyuan A. Yang, Fukai   Shan, Martin Pumera* and Haibo Zeng*. Advances of 2D bismuth in energy   sciences, Chem.   Soc. Rev., 2020, 49, 263-285.

17.      Shiying Guo, Wenhan Zhou, Bo Cai, Kan   Zhang, Shengli Zhang* and Haibo   Zeng*. Band engineering realized by chemical combination in 2D group VA-VA   materials,Nanoscale Horizons, 2019, 4, 1145–1152.

18.      Wenhan Zhou, Jiayi Chen, Pengxiang Bai,   Shiying Guo, Shengli Zhang*,   Xiufeng Song, Li Tao*, Haibo Zeng*.Two-Dimensional Pnictogen for Field-Effect Transistors, Research,   2019, 1046329.

19.      Lei Peng, Yu Cui, Liping Sun, Jinyan Du,   Sufan Wang, Shengli Zhang* and   Yucheng Huang*. Dipole controlled Schottky barrier in the   blue-phosphorene-phase of GeSe based van der Waals heterostructures, Nanoscale   Horizons, 2019, 4, 480–489.

20.      Bo Cai, Xi Chen, Meiqiu Xie, Shengli Zhang*, Xuhai Liu, Jinlong   Yang, Wenhan Zhou, Shiying Guo and Haibo Zeng*. A class of Pb-free double   perovskite halide semiconductors with intrinsic ferromagnetism, large spin   splitting and high curie temperature,Materials Horizons, 2018, 5,   961–968.

科研项目

1     面向高性能、低功耗晶体管的高态密度、长自由程新型二维电子材料的研究, 2020-2022, 主持;

国家自然科学基金委,重大研究计划-培育项目,80

2     单元素二维材料设计及物性调控科研项目, 2018-2021, 主持;江苏省科技厅,江苏省优秀青年基金,50

3    过渡金属二硫属化物范德华异质结的组装、能带调控和光学性质研究, 2015-2017      主持;国家自然科学基金委,青年基金,25

4     类石墨烯TMDCs范德华异质结能带调控和光学性质研究, 2014-2017主持;江苏省科技厅,江苏省青年基金,20

学术/社会兼职

担任中国光电产业平台光电材料专家委员会常务理事、全国材料新技术发展研究会理事、IEEE Member;同时是IEEE Electronic devices Letter, Advanced Functional Materials,   Advanced Electronic Materials, Angewandte Chemie, ACS Nano, JPCL, JPCC, JMCA,   JMCC, Nanoscale, ACS Applied Materials & Interfaces, ACS Applied   Electronic Materials, ACS Applied Nano Materials, PCCP, Phys Review Applied等多个期刊审稿人。

获奖、荣誉称号

2019年度入选江苏省青蓝工程中青年学术带头人

2019年度入选江苏省六大人才高峰

2018年度江苏省优秀青年基金获得者

2018年度南京市第十二届自然科学优秀学术论文奖,南京市

2017年度江苏省普通高校本科优秀毕业设计(论文)指导老师,二等奖

2016年度荣获青年教师进步奖,南京理工大学

2016年度荣获优秀科研团队,南京理工大学

2014年度荣获优秀毕业设计(论文)团队,南京理工大学


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邮编:210094

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